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Events for April 22, 2011
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Game Theory and Human Behavior Retreat
Fri, Apr 22, 2011
Thomas Lord Department of Computer Science, Information Sciences Institute, Ming Hsieh Department of Electrical and Computer Engineering, USC Viterbi School of Engineering
Workshops & Infosessions
Speakers:
⢠Gerd Gigerenzer
Center for Adaptive Behavior and Cognition, Max Planck Institute for Human Development
⢠Mark Turner
Cognitive Science, Case Western Reserve University
⢠Dan Simon
Law and Psychology, University of Southern California
⢠Tom Siegfried
Editor in Chief: Science News
Recent Book: A Beautiful Math
For updates to this information, visit:
http://gthb.usc.edu/Events/
The USC Research Collaboration Fund from the office of Randolph Hall, USC vice president for research, made this conference possible. It is the second in a series, following an event September 7, 2010 at the Institute for Creative Technologies that attracted some 55 participants.Location: Charlotte S. & Davre R. Davidson Continuing Education Conference Center (DCC) -
Audiences: Open: please email tambe [at] usc.edu to reserve a seat
Contact: Eric Mankin
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EE-Electrophysics Seminar
Fri, Apr 22, 2011 @ 10:00 AM - 11:00 PM
Ming Hsieh Department of Electrical and Computer Engineering
Conferences, Lectures, & Seminars
Speaker: Nidhi, Electrical and Computer Engineering Department at UCSB
Talk Title: Self-Aligned N-Polar GaN HEMTs: Towards Next-Generation Nitride Electronics
Abstract: III-Nitrides have emerged as a versatile new material family with unique material properties such as large piezoelectric polarization, high saturation velocity, high breakdown electric field and bandgap ranging from near IR (0.7 eV for InN) to deep UV (6.4 eV for AlN). This wide range of band-gap allows them to be extensively used in opto-electronics in a large range of wavelength, optical storage and high efficiency photovoltaics using InGaN alloys. Recently, AlGaN/GaN high-electron-mobility transistors (HEMTs) have also been widely used as power amplifiers for wireless communication applications and as power switches for rectification.
In this talk, I will emphasize on the N-polar orientation of GaN and its application towards high frequency electronics. N-polar GaN-based HEMTs offer several advantages over the more established Ga-polar technology such as the potential of ultra low ohmic contact resistance (20 Ω-µm demonstrated) and a natural back-barrier for charge confinement. The development of N-polar GaN electronics started late due to materials and processing challenges, but has been eventful with several significant achievements in the recent past. I will talk about the self-aligned MIS-HEMT technology we developed at UCSB and its development towards becoming a competitor to the established Ga-polar technology. Finally, I will discuss future directions for III-Nitride electronics and other exciting possibilities employing the novel materials.
Biography: Nidhi is a Ph.D candidate under Prof. Umesh Mishra in the Electrical and Computer Engineering Department at UCSB (University of California Santa Barbara). Her graduate work involved design and fabrication of N-polar GaN-based self-aligned MIS-HEMTs for very high frequency applications, like mm-wave power and possibly digital applications due to gate-first self-aligned design. She received the M. S. in Electrical and Computer Engineering from UCSB in 2008. She graduated second in her class of Electrical Engineering from Indian Institute of Technology, Kanpur, India with a Bachelor of Technology degree in 2006. Her research interests include deep submicron devices for high frequency applications, nanoscale semiconductor devices, power electronic devices and novel device structures on new materials for faster and energy-efficient electronics with expanded functionality.
Host: EE-Electrophysics
More Info: http://ee.usc.edu/news/seminars/eepLocation: Hughes Aircraft Electrical Engineering Center (EEB) - 248
Audiences: Everyone Is Invited
Contact: Marilyn Poplawski
Event Link: http://ee.usc.edu/news/seminars/eep
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Integrated Systems Seminar Series
Fri, Apr 22, 2011 @ 02:00 PM - 03:00 PM
Ming Hsieh Department of Electrical and Computer Engineering
Conferences, Lectures, & Seminars
Speaker: Prof. Boris Murmann, Stanford University
Talk Title: The next wave of mixed-signal interface electronics
Host: Prof. Hossein Hashemi and Firooz Aflatouni
Location: Hughes Aircraft Electrical Engineering Center (EEB) - 248
Audiences: Everyone Is Invited
Contact: Hossein Hashemi
