Conferences, Lectures, & Seminars
Events for February
-
Photonics Seminar - Alexander Szameit, Monday, February 3rd at 2pm in EEB 248
Mon, Feb 03, 2025 @ 02:00 PM - 03:30 PM
Ming Hsieh Department of Electrical and Computer Engineering
Conferences, Lectures, & Seminars
Speaker: Alexander Szameit, Professor, Chair for Experimental Solid-State Optics, University of Rostock
Talk Title: Topology in space, time, and space-time
Series: Photonics Seminar Series
Abstract: In recent years, topological phenomena in photonic systems have attracted much attention, with their striking features arising from robust states in the energy gaps of spatially periodic media. However, light waves are entities that extend in space as well as time, such that one may ask whether topological effects can also occur in the temporal domain, or even space-time. Intuitively, systems that are periodic in time may be gapped in momentum, leading to topological states localized at time interfaces. However, time - in contrast to space - exhibits a unique unidirectionality often referred to as the "arrow of time". Inspired by these features, I will present our most recent experiments on topological states residing at temporal interfaces. Moreover, I will discuss the formation of spacetime-topological events and demonstrate unique features such as their limited collapse under disorder and causality-suppressed coupling.
Biography: Alexander Szameit (*1979 in Halle, Germany) studied Physics at the Universities of Halle and Jena, Germany. He obtained his Diploma and PhD in 2004 and 2007, respectively. After spending time in Australia and Israel, he returned to Jena as an Assistant Professor in 2011. After receiving his habilitation in 2015, he was appointed as Full Professor at the University of Rostock in 2016, where he holds the chair for Experimental Solid-State Optics. His work deals with all aspects of complex light evolution in large-scale integrated photonic waveguide circuits, with a particular focus on topological photonics.
Host: Mercedeh Khajavikhan and Demetri Christodoulides
More Information: Alexander Szameit Flyer.pdf
Location: Hughes Aircraft Electrical Engineering Center (EEB) - 248
Audiences: Everyone Is Invited
Contact: Marilyn Poplawski
This event is open to all eligible individuals. USC Viterbi operates all of its activities consistent with the University's Notice of Non-Discrimination. Eligibility is not determined based on race, sex, ethnicity, sexual orientation, or any other prohibited factor. -
ECE Seminar - John Hennessy, NASA's Jet Propulsion Laboratory, Thursday, February 20th at 10am in EEB 248
Thu, Feb 20, 2025 @ 10:00 AM - 11:00 AM
Ming Hsieh Department of Electrical and Computer Engineering
Conferences, Lectures, & Seminars
Speaker: John Hennessy, NASA's Jet Propulsion Laboratory
Talk Title: Atomic layer processing to optimize the performance of ultraviolet coatings and sensors
Series: ECE Seminar
Abstract: The talk will describe the development of atomic layer deposition (ALD) and atomic layer etching (ALE) processes that utilize hydrogen fluoride as a co-reactant. At JPL this work has been motivated by the development of sensors and coatings operating in the far ultraviolet (λ = 90-200 nm) with an eye towards the emerging requirements of the Habitable Worlds Observatory, NASA's next astrophysics flagship mission of the 2030's. This talk will discuss the integration of these ALD/ALE coatings into two technologies at JPL: detector-integrated UV bandpass filters on silicon imaging sensors to enable solar- or visible-blind operation, and the demonstration of reflective aluminum mirror coatings protected by ALD fluorides. In both cases additional performance enhancement can also be obtained using novel atomic layer etching (ALE) processes to remove residual oxide contamination. Other applications of these processes in selective-area deposition, superconducting detectors, and lithium-ion batteries will be discussed.
Biography: John Hennessy is a microdevices engineer at NASA's Jet Propulsion Laboratory in the Advanced Detectors and Nanomaterials Group. His current research interests include the development of atomic layer deposition processes for optical and electrical applications related to UV detector-integrated filters, UV reflective coatings, and semiconductor surface passivation. He is currently the JPL institutional PI of the Caltech-led UVEX astrophysics mission, and the chair of the IEEE Metro LA Photonics Chapter. He received his BE and PhD degrees in electrical engineering from The Cooper Union in 2002, and the Massachusetts Institute of Technology in 2010. He is a recipient of the SPIE Rising Researcher Award in 2017 and a NASA Early Career Public Achievement Medal in 2020.
Host: Richard Leahy
More Information: John Hennessy Seminar Flyer.pdf
Location: Hughes Aircraft Electrical Engineering Center (EEB) - 248
Audiences: Everyone Is Invited
Contact: Marilyn Poplawski
This event is open to all eligible individuals. USC Viterbi operates all of its activities consistent with the University's Notice of Non-Discrimination. Eligibility is not determined based on race, sex, ethnicity, sexual orientation, or any other prohibited factor. -
ECE Seminar: Novel Materials for Next-Generation Electronics: From Low-Power to Extreme Environment Computing
Tue, Feb 25, 2025 @ 10:00 AM - 11:00 AM
Ming Hsieh Department of Electrical and Computer Engineering
Conferences, Lectures, & Seminars
Speaker: Deep Jariwala, Peter & Susanne Armstrong Distinguished Scholar, Department of Electrical and Systems Engineering, University of Pennsylvania
Talk Title: Novel Materials for Next-Generation Electronics: From Low-Power to Extreme Environment Computing
Abstract: Silicon has been the dominant material for electronic computing for decades and very likely will stay dominant for the foreseeable future. However, it is well-known that Moore’s law that propelled Silicon into this dominant position is long dead. Therefore, a fervent search for (i) new semiconductors that could directly replace silicon or (ii) new architectures with novel materials/devices added onto silicon or (iii) new physics/state-variables or a combination of above has been the subject of much of the electronic materials and devices research of the past 2 decades.
The above problem is further complicated by the changing paradigm of computing from arithmetic centric to data centric in the age of billions of internet-connected devices and artificial intelligence as well as the ubiquity of computing in ever more challenging environments. Therefore, there is a pressing need for complementing and supplementing Silicon to operate with greater efficiency, speed and handle greater amounts of data. This is further necessary since a completely novel and paradigm changing computing platform (e.g. all optical computing or quantum computing) remains out of reach for now. The above is however not possible without fundamental innovation in new electronic materials and devices. Therefore, in this talk, I will try to make the case of how novel layered two-dimensional (2D) chalcogenide materialsˆ1 and three-dimensional (3D) nitride materials might present interesting avenues to overcome some of the limitations being faced by Silicon hardware. I will start by presenting our ongoing and recent work on integration of 2D chalcogenide semiconductors with siliconˆ2 to realize low-power tunnelling field effect transistors. In particular I will focus on In-Se based 2D semiconductorsˆ2 for this application and extend discussion on them to phase-pure, epitaxial thin-film growth over wafer scales,ˆ3 at temperatures low-enough to be compatible with back end of line (BEOL) processing in Silicon fabs.
I will then switch gears to discuss memory devices from 2D materials when integrated with emerging wurtzite structure ferroelectric nitride materialsˆ4 namely aluminium scandium nitride (AlScN). First, I will present on Ferroelectric Field Effect Transistors (FE-FETs) made from 2D materials when integrated with AlScN and make the case for 2D semiconductors in this application.ˆ5-7 I will then switch resistive memory devices made from AlScN termed Ferrodiodes (FeDs)ˆ8 which show multi-bit operationˆ9 as well as compute in memory (CIM)ˆ10. Finally, I will make a case as to why AlScN FeDs are uniquely suited as a high temperature non-volatile memory demonstrating stable operation upto 600 Cˆ11 and how AlScN can be integrated onto SiCˆ12 for stable data retention in ferroelectric capacitors upto 800 C.ˆ13 I will end by providing a broad outlook on both AI computing hardware as well as high-temperature computing.ˆ14
References:
(1) Song, S.; Rahaman, M.; Jariwala, D. ACS Nano 2024, 18, 10955–10978.
(2) Miao, J.; et al. Jariwala, D. Nature Electronics 2022, 5 (11), 744-751.
(3) Song, S.; et al. Jariwala, D. Matter 2023, 6, 3483-3498.
(4) Kim, K.-H.; et al. Jariwala, D. Nature Nanotechnology 2023, 18 (5), 422-441.
(5) Liu, X.; et al. Jariwala, D.. Nano Letters 2021, 21 (9), 3753-3761.
(6) Kim, K.-H.; et al. Jariwala, D. Nature Nanotechnology 2023, 18, 1044–1050.
(7) Kim, K.-H.; et al. Jariwala, D. ACS Nano 2024, 18 (5), 4180-4188.
(8) Liu, X.; et al. Jariwala, D. Applied Physics Letters 2021, 118 (20), 202901.
(9) Kim, K.-H.; et al. Jariwala, D. ACS Nano 2024, 18 (24), 15925-15934.
(10) Liu, X.; et al. Jariwala, D. Nano Letters 2022, 22 (18), 7690–7698.
(11) Pradhan, D. K.; et al. Jariwala, D. Nature Electronics 2024, 7 (5), 348-355.
(12) He, Y.; et al. Jariwala, D. Applied Physics Letters 2023, 123 (12).
(13) He, Y.; et al. Jariwala, D. arXiv preprint arXiv:2411.16652 2024.
(14) Pradhan, D. K.; et al. Jariwala, D. Nature Reviews Materials 2024, 9 (11), 790-807.
Biography: Deep Jariwala is an Associate Professor and the Peter & Susanne Armstrong Distinguished Scholar in the Electrical and Systems Engineering as well as Materials Science and Engineering at the University of Pennsylvania (Penn). Deep completed his undergraduate degree in Metallurgical Engineering from the Indian Institute of Technology in Varanasi and his Ph.D. in Materials Science and Engineering at Northwestern University. Deep was a Resnick Prize Postdoctoral Fellow at Caltech before joining Penn to start his own research group. His research interests broadly lie at the intersection of new materials, surface science and solid-state devices for computing, opto-electronics and energy harvesting applications in addition to the development of correlated and functional imaging techniques. Deep’s research has been widely recognized with several awards from professional societies, funding bodies, industries as well as private foundations, the most notable ones being the Optica Adolph Lomb Medal, the Bell Labs Prize, the AVS Peter Mark Memorial Award, IEEE Photonics Society Young Investigator Award, IEEE Nanotechnology Council Young Investigator Award, IUPAP Early Career Scientist Prize in Semiconductors, the SPIE Early career achievement award and the Alfred P. Sloan Fellowship. He has published over 150 journal papers with more than 22000 citations and holds several patents. He serves as the Associate Editor for ACS Nano Letters and has been appointed as a Distinguished Lecturer for the IEEE Nanotechnology Council for 2025.
Website: jariwala.seas.upenn.eduEmail: dmj@seas.upenn.edu
Host: Host: Dr. Richard M. Leahy, leahy@usc.edu
Webcast: https://usc.zoom.us/j/91519073492?pwd=569WY2cozJtQ7ipwWpTExkG02fH5wq.1More Information: ECE-Seminar-Jariwala-022525.pdf
Location: Hughes Aircraft Electrical Engineering Center (EEB) - 132
WebCast Link: https://usc.zoom.us/j/91519073492?pwd=569WY2cozJtQ7ipwWpTExkG02fH5wq.1
Audiences: Everyone Is Invited
Contact: Mayumi Thrasher
This event is open to all eligible individuals. USC Viterbi operates all of its activities consistent with the University's Notice of Non-Discrimination. Eligibility is not determined based on race, sex, ethnicity, sexual orientation, or any other prohibited factor.
