Logo: University of Southern California

Events Calendar



Select a calendar:



Filter October Events by Event Type:



Events for October 05, 2012

  • Repeating EventMeet USC: Admission Presentation, Campus Tour, & Engineering Talk

    Fri, Oct 05, 2012

    Viterbi School of Engineering Undergraduate Admission

    Receptions & Special Events


    This half day program is designed for prospective freshmen and family members. Meet USC includes an information session on the University and the Admission process; a student led walking tour of campus and a meeting with us in the Viterbi School. Meet USC is designed to answer all of your questions about USC, the application process and financial aid. Reservations are required for Meet USC. This program occurs twice, once at 8:30 a.m. and again at 12:30 p.m. Please visit https://esdweb.esd.usc.edu/unresrsvp/MeetUSC.aspx to check availability and make an appointment. Be sure to list an Engineering major as your "intended major" on the webform!

    Location: Ronald Tutor Campus Center (TCC) -

    Audiences: Prospective Freshmen Students and Families

    View All Dates

    Contact: Viterbi Admission

    Add to Google CalendarDownload ICS File for OutlookDownload iCal File
  • Raytheon-Transitioning From Academia to Corporate America

    Raytheon-Transitioning From Academia to Corporate America

    Fri, Oct 05, 2012 @ 12:00 PM - 01:30 PM

    Viterbi School of Engineering Student Affairs

    Workshops & Infosessions


    Raytheon's Vice President of Quality & Mission Assurance, Clifton J. “Jerry” Charlow, will lead a discussion on the critical skills needed by students to transition successfully in Corporate America.

    Lunch provided.

    RSVP to viterbi.ced@usc.edu. RSVP required.

    Location: Seeley Wintersmith Mudd Memorial Hall (of Philosophy) (MHP) - 105

    Audiences: Everyone Is Invited

    Contact: Center for Engineering Diversity

    Add to Google CalendarDownload ICS File for OutlookDownload iCal File
  • W.V.T. Rusch Honors Colloquium

    Fri, Oct 05, 2012 @ 01:00 PM - 02:00 PM

    Viterbi School of Engineering Student Affairs

    Conferences, Lectures, & Seminars


    Speaker: Safar Hatami, Broadcom, Inc.

    Talk Title: Performance Variations in Digital Circuits

    Abstract: Safar Hatami, from Broadcom, Inc., is giving a talk for the W.V.T. Rusch Honors Colloquium.

    Host: W.V.T. Rusch Honors Program

    More Info: http://viterbi.usc.edu/students/undergrad/honors/schedules/

    Location: Seeley G. Mudd Building (SGM) - 101

    Audiences: Everyone Is Invited

    Contact: Jeffrey Teng

    Event Link: http://viterbi.usc.edu/students/undergrad/honors/schedules/

    Add to Google CalendarDownload ICS File for OutlookDownload iCal File
  • Munushian Seminar

    Fri, Oct 05, 2012 @ 02:00 PM - 03:00 PM

    Ming Hsieh Department of Electrical and Computer Engineering

    Conferences, Lectures, & Seminars


    Speaker: R. Stanley Williams, Hewlett-Packard Labs

    Talk Title: Mott Memristors, Spiking Neuristors and Touring Complete Computing with an Electronic Action Potential

    Abstract: Dr. Matthew Pickett and I have been collaborating on a project at HP Labs to explore the possibility of using “locally-active memristors” as the basis
    for extremely low-power transistorless computation. We first analyzed the thermally-induced first order phase transition from a Mott insulator to
    a highly conducting state in a family of correlated-electron transition-metal oxides, such as Ti4O7 and NbO2. The current-voltage characteristic
    of a simple cross-point device that has a thin film of such an oxide sandwiched between two metal electrodes displays a current-controlled
    or ‘S’-type negative differential resistance (NDR) caused by Joule self-heating if the ambient temperature is below the metal-insulator transition
    (MIT). We derived simple analytical equations for the behavior these devices [1,2] that quantitatively reproduce their experimentally measured
    electrical characteristics with only one or two fitting parameters, and found that the resulting dynamical model was mathematically equivalent to
    the “memristive system” formulation of Leon Chua and Steve Kang [3]; we thus call these devices “Mott Memristors”. Moreover, these devices
    display the property of “local activity”; because of the NDR, they are capable of injecting energy into a circuit (converting DC to AC electrical power)
    over a limited biasing range. We built and demonstrated Pearson-Anson oscillators based on a parallel circuit of one Mott memristor and one
    capacitor, and were able to quantitatively model the dynamical behavior of the circuit, including the subnanosecond and subpicoJoule memristor
    switching time and energy, using SPICE. We then built a neuristor, an active subcircuit originally proposed by Hewitt Crane [4] in 1960 without
    an experimental implementation, using two Mott memristors and two capacitors. The neuristor electronically emulates the Hodgkin-Huxley model
    of the axon action potential of a neuron, which has been recently shown by Chua et al. [5] to be a circuit with two parallel memristors, and we
    show experimental results that are quantitatively matched by SPICE simulations of the output bifurcation, signal gain and spiking behavior that
    are believed to be the basis for computation in biological systems. Finally, through SPICE, we demonstrate that spiking neuristors are capable of
    Boolean logic and Touring complete computation by designing and simulating the one dimensional cellular nonlinear network based on ‘Rule 137’.
    1. Pickett, M. D., Borghetti, J., Yang, J. J., Medeiros-Ribeiro, G. & Williams, R. S. Coexistence of memristance and negative differential resistance in a nanoscale metal-oxide-metal system. Advanced Materials (2011).
    2. Pickett, M. D. & Williams, R. S. Sub-100 femtoJoule and sub-nanosecond thermally-driven threshold switching in niobium oxide crosspoint nanodevices. Nanotechnology In Press (2012).
    3. Chua, L. & Kang, S. Memristive devices and systems. Proceedings of the IEEE 64, 209-223 (1976).
    4. Crane, H. D. The Neuristor. IRE Transactions on Electronic Computers EC-9, 370-371 (1960).
    5. Chua, L., Sbitnev, V. & Kim, H. Hodgkin-Huxley axon is made of memristors. International Journal of Bifurcation and Chaos 22, 1-48 (2012).

    Biography: R. Stanley Williams is an HP Senior Fellow at Hewlett-Packard Laboratories, one of only five active technologists in HP with this title, and the Director of the Cognitive
    Systems Laboratory. He received a B.A. degree in Chemical Physics in 1974 from Rice University and his Ph.D. in Physical Chemistry from U. C. Berkeley in 1978. He was
    a Member of Technical Staff at AT&T Bell Labs from 1978-80 and a faculty member (Assistant, Associate and Full Professor) of the Chemistry Department at UCLA from
    1980 – 1995. He joined HP Labs in 1995 to found the Quantum Science Research group, which originally focused on fundamental research at the nanometer scale. His
    primary scientific research during the past thirty years has been in the areas of solid-state chemistry and physics, and their applications to technology . In 2008, a team
    of researchers he led announced that they had built and demonstrated the first intentional memristor, the fourth fundamental electronic circuit element predicted by
    Prof. Leon Chua in 1971, complementing the capacitor, resistor and inductor. In 2010, he was named one of the first recipients of the HP CEO’s Award for Innovation
    for his work in sensing systems (CeNSE, the Central Nervous System for the Earth). He has received other awards for business, scientific and academic achievement,
    including the 2009 EETimes Innovator of the Year ACE Award, the 2007 Glenn T. Seaborg Medal for contributions to Chemistry, the 2004 Herman Bloch Medal for
    Industrial Research, and the 2000 Julius Springer Award for Applied Physics. He has over 130 US patents with ~100 pending, more than 200 patents outside the US,
    and over 380 papers published in reviewed scientific journals.

    Host: EE-Electrophysics

    Location: Olin Hall of Engineering (OHE) - 132

    Audiences: Everyone Is Invited

    Contact: Marilyn Poplawski

    Add to Google CalendarDownload ICS File for OutlookDownload iCal File
  • Astani CEE Ph.D. Seminar

    Fri, Oct 05, 2012 @ 03:00 PM - 05:00 PM

    Sonny Astani Department of Civil and Environmental Engineering

    Conferences, Lectures, & Seminars


    Speaker: Falk Feddersen Associate Research Oceanographer , Integrative Oceanography Division Scripps Institution of Oceanography, UCSD

    Talk Title: Surfzone eddies in strong alongshore currents: Forced or Instabilities?

    Abstract:

    Beaches throughout the United States are chronically impacted by poor water quality, making swimmers sick and affecting coastal economies. Run-off pollution often drains directly into the surfzone and the mechanisms dispersing and diluting pollution or other tracers (e.g. larvae) are not clear. Surfzone 2D turbulent eddies are the dominant mechanisms for surfzone dispersion and dilution, and these eddies are generated either from a shear-instability of the alongshore current (“shear-waves''), from finite-crest length breaking of individual waves, or from alongshore gradients in wave-group forcing, which have distinct length-scales. SandyDuck based observations of surfzone eddies are compared to funwaveC model simulations. Finite-crest length breaking induces energy at much larger frequencies and wave-lengths than a NSWE model. The relative contributions of shear instabilities and finite-crest length breaking on the momentum and vorticity dynamics are examined. The results will have implications for modeling the dispersion and dilution of surfzone tracers (whether fecal indicator bacteria, sediment, or larvae).


    Host: Dr. Patrick Lynett

    Location: John Stauffer Science Lecture Hall (SLH) - 102

    Audiences: Everyone Is Invited

    Contact: Evangeline Reyes

    Add to Google CalendarDownload ICS File for OutlookDownload iCal File
  • BME 101 Review Session

    Fri, Oct 05, 2012 @ 04:00 PM - 06:00 PM

    Viterbi School of Engineering Student Affairs

    Workshops & Infosessions


    Join VARC tutors for a review session for BME 101 before the midterm! Come with your books, notes, and questions.

    Location: Ronald Tutor Hall of Engineering (RTH) - 109

    Audiences: Undergrad

    Contact: Viterbi Academic Resource Center

    Add to Google CalendarDownload ICS File for OutlookDownload iCal File