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SUNMONTUEWEDTHUFRISAT
Events for October 05, 2012
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Meet USC: Admission Presentation, Campus Tour, & Engineering TalkFri, Oct 05, 2012
Viterbi School of Engineering Undergraduate Admission
Receptions & Special Events
This half day program is designed for prospective freshmen and family members. Meet USC includes an information session on the University and the Admission process; a student led walking tour of campus and a meeting with us in the Viterbi School. Meet USC is designed to answer all of your questions about USC, the application process and financial aid. Reservations are required for Meet USC. This program occurs twice, once at 8:30 a.m. and again at 12:30 p.m. Please visit https://esdweb.esd.usc.edu/unresrsvp/MeetUSC.aspx to check availability and make an appointment. Be sure to list an Engineering major as your "intended major" on the webform!
Location: Ronald Tutor Campus Center (TCC) -
Audiences: Prospective Freshmen Students and Families
Contact: Viterbi Admission
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Raytheon-Transitioning From Academia to Corporate America
Fri, Oct 05, 2012 @ 12:00 PM - 01:30 PM
Viterbi School of Engineering Student Affairs
Workshops & Infosessions
Raytheon's Vice President of Quality & Mission Assurance, Clifton J. âJerryâ Charlow, will lead a discussion on the critical skills needed by students to transition successfully in Corporate America.
Lunch provided.
RSVP to viterbi.ced@usc.edu. RSVP required.Location: Seeley Wintersmith Mudd Memorial Hall (of Philosophy) (MHP) - 105
Audiences: Everyone Is Invited
Contact: Center for Engineering Diversity
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W.V.T. Rusch Honors Colloquium
Fri, Oct 05, 2012 @ 01:00 PM - 02:00 PM
Viterbi School of Engineering Student Affairs
Conferences, Lectures, & Seminars
Speaker: Safar Hatami, Broadcom, Inc.
Talk Title: Performance Variations in Digital Circuits
Abstract: Safar Hatami, from Broadcom, Inc., is giving a talk for the W.V.T. Rusch Honors Colloquium.
Host: W.V.T. Rusch Honors Program
More Info: http://viterbi.usc.edu/students/undergrad/honors/schedules/
Location: Seeley G. Mudd Building (SGM) - 101
Audiences: Everyone Is Invited
Contact: Jeffrey Teng
Event Link: http://viterbi.usc.edu/students/undergrad/honors/schedules/
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Munushian Seminar
Fri, Oct 05, 2012 @ 02:00 PM - 03:00 PM
Ming Hsieh Department of Electrical and Computer Engineering
Conferences, Lectures, & Seminars
Speaker: R. Stanley Williams, Hewlett-Packard Labs
Talk Title: Mott Memristors, Spiking Neuristors and Touring Complete Computing with an Electronic Action Potential
Abstract: Dr. Matthew Pickett and I have been collaborating on a project at HP Labs to explore the possibility of using âlocally-active memristorsâ as the basis
for extremely low-power transistorless computation. We first analyzed the thermally-induced first order phase transition from a Mott insulator to
a highly conducting state in a family of correlated-electron transition-metal oxides, such as Ti4O7 and NbO2. The current-voltage characteristic
of a simple cross-point device that has a thin film of such an oxide sandwiched between two metal electrodes displays a current-controlled
or âSâ-type negative differential resistance (NDR) caused by Joule self-heating if the ambient temperature is below the metal-insulator transition
(MIT). We derived simple analytical equations for the behavior these devices [1,2] that quantitatively reproduce their experimentally measured
electrical characteristics with only one or two fitting parameters, and found that the resulting dynamical model was mathematically equivalent to
the âmemristive systemâ formulation of Leon Chua and Steve Kang [3]; we thus call these devices âMott Memristorsâ. Moreover, these devices
display the property of âlocal activityâ; because of the NDR, they are capable of injecting energy into a circuit (converting DC to AC electrical power)
over a limited biasing range. We built and demonstrated Pearson-Anson oscillators based on a parallel circuit of one Mott memristor and one
capacitor, and were able to quantitatively model the dynamical behavior of the circuit, including the subnanosecond and subpicoJoule memristor
switching time and energy, using SPICE. We then built a neuristor, an active subcircuit originally proposed by Hewitt Crane [4] in 1960 without
an experimental implementation, using two Mott memristors and two capacitors. The neuristor electronically emulates the Hodgkin-Huxley model
of the axon action potential of a neuron, which has been recently shown by Chua et al. [5] to be a circuit with two parallel memristors, and we
show experimental results that are quantitatively matched by SPICE simulations of the output bifurcation, signal gain and spiking behavior that
are believed to be the basis for computation in biological systems. Finally, through SPICE, we demonstrate that spiking neuristors are capable of
Boolean logic and Touring complete computation by designing and simulating the one dimensional cellular nonlinear network based on âRule 137â.
1. Pickett, M. D., Borghetti, J., Yang, J. J., Medeiros-Ribeiro, G. & Williams, R. S. Coexistence of memristance and negative differential resistance in a nanoscale metal-oxide-metal system. Advanced Materials (2011).
2. Pickett, M. D. & Williams, R. S. Sub-100 femtoJoule and sub-nanosecond thermally-driven threshold switching in niobium oxide crosspoint nanodevices. Nanotechnology In Press (2012).
3. Chua, L. & Kang, S. Memristive devices and systems. Proceedings of the IEEE 64, 209-223 (1976).
4. Crane, H. D. The Neuristor. IRE Transactions on Electronic Computers EC-9, 370-371 (1960).
5. Chua, L., Sbitnev, V. & Kim, H. Hodgkin-Huxley axon is made of memristors. International Journal of Bifurcation and Chaos 22, 1-48 (2012).
Biography: R. Stanley Williams is an HP Senior Fellow at Hewlett-Packard Laboratories, one of only five active technologists in HP with this title, and the Director of the Cognitive
Systems Laboratory. He received a B.A. degree in Chemical Physics in 1974 from Rice University and his Ph.D. in Physical Chemistry from U. C. Berkeley in 1978. He was
a Member of Technical Staff at AT&T Bell Labs from 1978-80 and a faculty member (Assistant, Associate and Full Professor) of the Chemistry Department at UCLA from
1980 â 1995. He joined HP Labs in 1995 to found the Quantum Science Research group, which originally focused on fundamental research at the nanometer scale. His
primary scientific research during the past thirty years has been in the areas of solid-state chemistry and physics, and their applications to technology . In 2008, a team
of researchers he led announced that they had built and demonstrated the first intentional memristor, the fourth fundamental electronic circuit element predicted by
Prof. Leon Chua in 1971, complementing the capacitor, resistor and inductor. In 2010, he was named one of the first recipients of the HP CEOâs Award for Innovation
for his work in sensing systems (CeNSE, the Central Nervous System for the Earth). He has received other awards for business, scientific and academic achievement,
including the 2009 EETimes Innovator of the Year ACE Award, the 2007 Glenn T. Seaborg Medal for contributions to Chemistry, the 2004 Herman Bloch Medal for
Industrial Research, and the 2000 Julius Springer Award for Applied Physics. He has over 130 US patents with ~100 pending, more than 200 patents outside the US,
and over 380 papers published in reviewed scientific journals.
Host: EE-Electrophysics
Location: Olin Hall of Engineering (OHE) - 132
Audiences: Everyone Is Invited
Contact: Marilyn Poplawski
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Astani CEE Ph.D. Seminar
Fri, Oct 05, 2012 @ 03:00 PM - 05:00 PM
Sonny Astani Department of Civil and Environmental Engineering
Conferences, Lectures, & Seminars
Speaker: Falk Feddersen Associate Research Oceanographer , Integrative Oceanography Division Scripps Institution of Oceanography, UCSD
Talk Title: Surfzone eddies in strong alongshore currents: Forced or Instabilities?
Abstract:
Beaches throughout the United States are chronically impacted by poor water quality, making swimmers sick and affecting coastal economies. Run-off pollution often drains directly into the surfzone and the mechanisms dispersing and diluting pollution or other tracers (e.g. larvae) are not clear. Surfzone 2D turbulent eddies are the dominant mechanisms for surfzone dispersion and dilution, and these eddies are generated either from a shear-instability of the alongshore current (âshear-waves''), from finite-crest length breaking of individual waves, or from alongshore gradients in wave-group forcing, which have distinct length-scales. SandyDuck based observations of surfzone eddies are compared to funwaveC model simulations. Finite-crest length breaking induces energy at much larger frequencies and wave-lengths than a NSWE model. The relative contributions of shear instabilities and finite-crest length breaking on the momentum and vorticity dynamics are examined. The results will have implications for modeling the dispersion and dilution of surfzone tracers (whether fecal indicator bacteria, sediment, or larvae).
Host: Dr. Patrick Lynett
Location: John Stauffer Science Lecture Hall (SLH) - 102
Audiences: Everyone Is Invited
Contact: Evangeline Reyes
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BME 101 Review Session
Fri, Oct 05, 2012 @ 04:00 PM - 06:00 PM
Viterbi School of Engineering Student Affairs
Workshops & Infosessions
Join VARC tutors for a review session for BME 101 before the midterm! Come with your books, notes, and questions.
Location: Ronald Tutor Hall of Engineering (RTH) - 109
Audiences: Undergrad
Contact: Viterbi Academic Resource Center
