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Graphene and Carbon Nanotube Electronics: Device Physics and Simulation

Presented by Jing Guo, University of FloridaAbstract: In recent years, significant progress has been achieved in graphene and carbon nanotube (CNT) electronics. In a graphene or carbon nanotube, low bias transport can be nearly ballistic. Deposition of high- gate insulators does not degrade the carrier mobility because of an absence of dangling bonds. The conduction and valence bands are symmetric, which is advantageous for complementary applications. The Excellent transport property promises high-speed transistor applications. Carbon-based nanostructures are receiving much attention for possible device applications. We have developed a self-consistent atomistic simulator for graphene and CNT field-effect transistors (FETs) based on the non-equilibrium Green's function (NEGF) formalism, and applied it to understand and explain experiments. The simulator provides an atomistic scale description for quantum transport in the presence of inelastic scattering and electron-photon interaction. We show that CNTFET is capable of delivering a near ballistic DC on-current even under high source-drain bias conditions. The radio frequency (RF) characteristics of CNTFETs are simulated for understanding potential high-speed transistor applications. On graphene electronics, we show that edge chemistry of graphene nanoribbons (GNRs) provides promising opportunities to engineer the device properties. Device physics and design options of GNR-based tunneling transistors are also examined by atomistic device simulations. Biography: Jing Guo received the Ph.D. degree in electrical engineering from Purdue University, West Lafayette, IN, and subsequently joined University of Florida as an assistant professor in Aug. 2004. His research interests focus on modeling and simulation of nanoscale devices with applications in electronics and optoelectronics, in close collaboration with experimentalists. He has published over sixty peer-reviewed journal papers on prestigious journals including Science, Nature, Phys. Rev. Lett., Nano Lett., Appl. Phys. Lett., Nature Nanotechnology, and IEEE Transactions. He is a recipient of the National Science Foundation (NSF) Faculty Early CAREER Award, and served in the technical program committee of International Electron Device Meeting (IEDM) and Device Research Conference (DRC). He is the coauthor of the book, "Nanoscale Transistors: Device Physics, Modeling, and Simulation" published by Springer.

Location: Kaprielian Hall (KAP) - 156

Audiences: Everyone Is Invited

Contact: Hazel Xavier