Events Calendar

EE-Electrophysics Seminar

Speaker: Daniel Feezell, Materials Department, University of California, Santa Barbara

Talk Title: Status and Future of Nonpolar/Semipolar III-Nitride Materials and Devices

Abstract: III-Nitride materials enable a wide variety of high-impact technologies, including solid-state lighting, high-density optical data storage, energy efficient displays, and next-generation power electronics. Commercially available III-Nitride devices are grown on the polar c-plane of the wurtzite crystal, and their performance is adversely affected by the presence of polarization-related electric fields. As an alternative to conventional c-plane technologies, growth of III-Nitride structures on nonpolar/semipolar planes presents a viable approach to reducing or eliminating the issues associated with polarization-related electric fields. Optical devices fabricated on these alternative planes emerge with several inherent advantages, including improved radiative efficiency, increased design flexibility, and the potential for superior performance in the elusive green spectral region. In this talk, I will review the unique characteristics of nonpolar/semipolar III-Nitrides and discuss the application of this materials platform to the development of high-performance laser diodes and light-emitting diodes. I will conclude by proposing several future research directions that utilize nonpolar/semipolar III-Nitride technology.

Biography: Daniel Feezell completed his Ph.D. in Electrical Engineering at the University of California, Santa Barbara (UCSB) in 2005 for work on InP-based vertical-cavity surface-emitting lasers. He is currently a Project Scientist in the Solid-State Lighting and Energy Center at UCSB, where his research interests include growth, fabrication, and characterization of nonpolar/semipolar III-Nitrides for energy efficiency applications. Prior to joining UCSB he was a Senior Device Scientist and the first employee at Soraa, Inc., where he developed high-performance III-Nitride laser diodes and light-emitting diodes. For his role in the achievement of the first nonpolar III-Nitride laser diodes he received the 30th Annual Japanese Journal of Applied Physics Paper Award. He also invented an AlGaN-cladding-free nonpolar laser diode structure that is currently being utilized in cutting-edge industry products. For this work he received a commendation for excellence in technical communication from Laser Focus World magazine. He is the author or co-author of more than 30 peer-reviewed conference and journal publications, and has received several patents.

Host: EE-Electrophysics

More Info: ee.usc.edu/news/seminars/eep

Location: Hughes Aircraft Electrical Engineering Center (EEB) - 248

Audiences: Everyone Is Invited

Contact: Marilyn Poplawski

Event Link: ee.usc.edu/news/seminars/eep