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EE-Electrophysics Seminar
Thu, Apr 21, 2011 @ 10:00 AM - 11:00 AM
Ming Hsieh Department of Electrical and Computer Engineering
Conferences, Lectures, & Seminars
Speaker: Wei Wu, Senior Scientist, HP Labs, Hewlett-Packard Co.
Talk Title: Nano-Crossbar Circuits, Optical Meta-Materials and SERS Sensors
Abstract: Semiconductor industry has enjoyed great successes by following the âMooreâs lawâ for more than four decades. With the end of the roadmap looming in the horizon, great efforts have been made to look for the alternatives for âpost-Siâ electronics. I will present our work on crossbar circuits, especially crossbar memory circuits based on transition metal oxide (i.e. memristor). Memristor is a type of resistive RAM device. It stores the information by ion movements inside the switching material, instead of charge trapping as in other conventional memory devices. We have demonstrated several generations of crossbar memory circuits with record-high densities, and have also integrated memristor and Si CMOS circuits successfully. The technologies developed for nano-electronics were applied to several other areas. One example I would like to share is optical negative meta-materials (NIMs) at near-IR range. That includes NIMs with negative reflective index (both negative permittivity and permeability) at 1.55 m range, fast modulation of NIMs and non-linear effects of NIMs. Another example is highly sensitive surface enhanced Raman spectroscopy (SERS) sensors fabricated using the 3-D nano-patterning technology we developed. The end of roadmap may be getting closer, but it is just the start of a new era, where we can leverage on what we have been developing in the past and make great impacts on the whole society.
Biography: Wei Wu graduated from Peking University with a BS in Physics in 1996, and received a Ph.D. in Electrical Engineering from Princeton University in 2003. He joined HP labs in 2003, and he is a senior scientist at nano-electronics research group (formerly known as quantum science research). His work on nanoimprint lithography has enabled nano-electronic and nano-photonic applications at HP labs for the last seven years. His work includes crossbar memory (i.e. memristor) and logic circuits with the record high densities, the first nanoimprint-fabricated optical negative index meta-material at 1.55m range, the first optical modulation using negative index meta-material at near-IR, the first third harmonic generation using meta-material, highly sensitive surface enhanced Raman sensors fabricated using 3-D nanoimprint, the first room-temperature working single electron memory and the first large area bit-patterned magnetic media fabricated using nanoimprint. The nanoimprint machine he invented has been commercialized via IP licensing. He coauthored 65 peer reviewed journal papers and more than 60 conference presentations, including 10 keynote and invited presentations. He has 49 granted US patents and 77 pending applications. He is serving as HPâs representative at SEMATECH lithography program advisory group. He is a senior member of IEEE and serving in the executive committee of IEEE SFBA nanotechnology council.
Host: EE-Electrophysics
More Info: http://ee.usc.edu/news/seminars/eepLocation: Mark Taper Hall Of Humanities (THH) - 212
Audiences: Everyone Is Invited
Contact: Marilyn Poplawski
Event Link: http://ee.usc.edu/news/seminars/eep