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EE-Electrophysics Seminar
Mon, Feb 25, 2013 @ 02:00 PM - 03:00 PM
Ming Hsieh Department of Electrical and Computer Engineering
Conferences, Lectures, & Seminars
Speaker: Rehen Kapadia, University of California, Berkeley
Talk Title: Electronics Without Borders: Moving Towards Any Semiconductor âX’ on Any Substrate âY’
Abstract: Pushing the boundaries of electron devicesâfrom transistors to photovoltaicsâdemands complete control over device architectures and material systems. However, traditional growth and fabrication techniques often fall short when optimal design calls for non-planar geometries or integration of non-epitaxial material systems.
Thus, development of techniques for X-on-Y growth and integration, such as: (i) bottom-up growth of geometry and shape-controlled nanowires, (ii) integration of dissimilar material systems such as III-V’s and Si, and (iii) direct growth of high-quality semiconductors on metals are critical. In this talk, I discuss how semiconductor layer transfer techniques can be used to fabricate high-mobility III-V transistors on Si substrates, and the vapor-liquid-solid (VLS) growth mode can be used to grow templated nanowires and high-quality InP thin films directly on metal foils.
Specifically, I will cover three methods that move towards enabling X-on-Y. First, I will show a compound semiconductor on insulator (XOI) layer transfer technique that enables integration of free-standing, ultra-thin III-V membranes on Si substrates. The second method is a templated VLS nanowire growth technique for 3-D semiconductor structures on metal substrates. The last technique I illustrate is a thin-film vapor-liquid-solid growth technique for the direct growth of large grain (10-100 micron) polycrystalline InP on metal substrates.
Biography: Rehan Kapadia is currently a graduate researcher at the University of California, Berkeley. He is a National Science Foundation Graduate Student Fellow, and has published 24 journal articles, in journals such as Nature, Applied Physics Letters, Nano Letters, and Advanced Materials. He received a B.S. in Electrical Engineering from the University at Texas at Austin, M.S from UC Berkeley and will receive his Ph.D from UC Berkeley May 2013. His research interests center on material growth techniques that enable high-performance, scalable electronics, with a focus on energy devices.
Host: EE-Electrophysics
Location: Ronald Tutor Hall of Engineering (RTH) - 324
Audiences: Everyone Is Invited
Contact: Marilyn Poplawski