Events Calendar

EE-EP Seminar

Speaker: Han Wang, Massachusetts Institute of Technology

Talk Title: 2D Materials, Devices and Systems – A New Paradigm for Electronics and Optoelectronics

Abstract: In the past eight years, the research community has seen rapidly growing interests in two-dimensional (2D) crystals and their applications. The 2D carrier confinement in this versatile family of materials - whose members range from the well-known semi-metal graphene to the insulator boron nitride, or the semiconducting layered transition metal dichalcogenides (LTMD) -
confers to them unique band structures with correlated electronic states where charge, spin, orbital, valley and lattice degrees of freedom play an important role in defining their exceptional properties of carrier transport, tunable bandgaps, mechanical strength, piezoelectricity, thermoelectric effects and their interactions with light. These materials, still in their infancy, carry great potential to redefine nano-electronics, optoelectronics and their interaction with biological systems in the coming years. In this talk, I will present my work on understanding the material synthesis, device technology, carrier transport and the forward-looking engineering efforts to develop electronic applications based on 2D crystals at the device and circuit level. I will conclude with remarks on how these new materials are expected to change energy generation, biological sensors, medical electronics at both device and system levels.

Biography: Han Wang received the B.A. and M.Eng. degrees in electrical and information science, both with highest honors, from Cambridge University, England, in 2007 and 2008. He is currently pursuing the Ph.D. degree in Electrical Engineering and Computer Science at Massachusetts Institute of Technology (MIT). In summer 2012, he held an internship at IBM T. J. Watson Research Center. His research interests include the synthesis, device technology and
novel circuit applications of two-dimensional (2D) materials – including graphene, hBN, MoS2, WS2, etc., and their heterostructures – with emphasis on exploring both the fundamental understanding and forward-looking applications of 2D materials in ubiquitous electronics, optoelectronics, energy efficient applications, and interaction with biological systems. His past research also includes GaN-based III-V HEMTs for high power millimeter-wave applications and Si power electronic devices.
His work has been recognized with multiple awards including Cambridge University Agilent Prize, IEEE IEDM Best Student Paper Award, International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) Best Student Paper Award and numerous fellowships. Mr. Wang has authored or coauthored more than 40 publications in distinguished journals and conferences, 8 of them invited, 1 book chapter and 1 patent.

Host: EE-Electrophysics

Location: Hughes Aircraft Electrical Engineering Center (EEB) - 248

Audiences: Everyone Is Invited

Contact: Marilyn Poplawski