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Events for September
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Lyman Handy Colloquium
Thu, Sep 15, 2005 @ 12:30 PM
Mork Family Department of Chemical Engineering and Materials Science
University Calendar
Programmable molecular sensors and switches: appications in metabolic engineering, intelligent therapeutics, and biosensorsPresented by:Professor Christina D. SmolkeDivision of Chemistry and Chemical Engineering California Institute of TechnologyABSTRACT
Cells employ a variety of different sensor biomolecules to dynamically evaluate their environments and trigger appropriate metabolic responses. The ability to program cells with engineered molecules that can sense structural and chemical events is a critical technology for many of the challenges that face us in biotechnology and medical research. Recent progress in the design of tailor-made molecular switches and sensors is rapidly advancing our ability to engineer âsmartâ systems that will perform information processing or signal integration within cells or complex biological samples. I will discuss our work in the design a new class of nucleic acid-based molecular sensors that transform different types of informational input into biological function and their application in regulating complex cellular behavior. In particular, the application of these devices to metabolic engineering strategies for microbial alkaloid synthesis, targeted molecular therapies, and diagnostic devices will be addressed. **All first year materials science graduate students are required to attend**Location: Olin Hall of Engineering (OHE) - 122
Audiences: Everyone Is Invited
Contact: Petra Pearce
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Amazing Nanaochemistry and Nanomechanics at Silicon Carbide Surfaces
Fri, Sep 23, 2005 @ 02:30 PM - 04:00 PM
Mork Family Department of Chemical Engineering and Materials Science
University Calendar
Presented By:Professor Patrick G. SoukiassianCommissariat a l'Energie Atomique, Saclay and Universite de Paris-Sud, Orsay, FranceABSTRACTSilicon carbide (SiC) is a wide band gap IV-IV compound semiconductor having a strong interest in advanced applications such as high temperature, high power, high frequency electronic devices/sensors and in nanotechnology. Such important issues as hydrogen/oxygen nanochemistry and nanomechanics at hexagonal and cubic SiC surfaces are investigated by synchrotron radiation-based core level and valence band photoemission, atom resolved scanning tunneling microscopy and spectroscopy, and infrared absorption. Among some of the key results, i) the first example of H-induced semiconductor surface metallization, ii) the atomic scale interaction of oxygen with the surface and iii) subsequent initial oxide-interface formation, iv) the role of stress in surface organization and in atomic crack formation will be presented and discussed. The finding of H-induced semiconductor metallization surface directly impacts means to develop electrical contacts on wide band-gap chemically passive materials, particularly exciting for interfacing with biological systems, and gives control of surfaces for lubrication, e.g. for nano-mechanical devices.*Refreshments will be served at 2:30**All first year materials science majors are required to attend*
Location: Vivian Hall of Engineering (VHE) - 217
Audiences: Everyone Is Invited
Contact: Petra Pearce