Amazing Nanaochemistry and Nanomechanics at Silicon Carbide Surfaces

Presented By:Professor Patrick G. SoukiassianCommissariat a l'Energie Atomique, Saclay and Universite de Paris-Sud, Orsay, FranceABSTRACTSilicon carbide (SiC) is a wide band gap IV-IV compound semiconductor having a strong interest in advanced applications such as high temperature, high power, high frequency electronic devices/sensors and in nanotechnology. Such important issues as hydrogen/oxygen nanochemistry and nanomechanics at hexagonal and cubic SiC surfaces are investigated by synchrotron radiation-based core level and valence band photoemission, atom resolved scanning tunneling microscopy and spectroscopy, and infrared absorption. Among some of the key results, i) the first example of H-induced semiconductor surface metallization, ii) the atomic scale interaction of oxygen with the surface and iii) subsequent initial oxide-interface formation, iv) the role of stress in surface organization and in atomic crack formation will be presented and discussed. The finding of H-induced semiconductor metallization surface directly impacts means to develop electrical contacts on wide band-gap chemically passive materials, particularly exciting for interfacing with biological systems, and gives control of surfaces for lubrication, e.g. for nano-mechanical devices.*Refreshments will be served at 2:30**All first year materials science majors are required to attend*

Location: Vivian Hall of Engineering (VHE) - 217

Audiences: Everyone Is Invited

Contact: Petra Pearce