IN SITU HREM OF MATERIAL REACTIONS

Mork Family Department of Chemical Engineering and Materials Science Distinguished Lecture SeriesPresentsProfessor Robert SinclairDepartment of Materials Science and Engineering,
Stanford University, Stanford, CA 94305Abstract:
The reactions which occur at material interfaces and in thin films have a profound effect on the resulting structure and properties. One effective method to investigate such behavior is to follow its progress, in real time, using high-resolution imaging in a transmission electron microscope. This provides direct viewing, at the atomic level, and allows kinetic measurements by changing the sample temperature in a controlled fashion. The focused-ion beam machine (FIB) further extends this capability. The development of these methods, particularly for materials of interest for semiconductor devices, will be described, and their importance emphasized using an historical analogy.

Location: Olin Hall of Engineering (OHE) - 122

Audiences: Everyone Is Invited

Contact: Petra Pearce Sapir